Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 4.99
Each (In a Pack of 2) (ex VAT)
€ 5.938
Each (In a Pack of 2) (inc. VAT)
Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Select packaging type
Standard
2
€ 4.99
Each (In a Pack of 2) (ex VAT)
€ 5.938
Each (In a Pack of 2) (inc. VAT)
Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | € 4.99 | € 9.98 |
20 - 48 | € 4.56 | € 9.12 |
50 - 98 | € 4.34 | € 8.68 |
100 - 198 | € 4.08 | € 8.16 |
200+ | € 3.88 | € 7.76 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC