Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1

RS Stock No.: 262-5855Brand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

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€ 2.70

Each (In a Pack of 5) (ex VAT)

€ 3.213

Each (In a Pack of 5) (inc. VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type

€ 2.70

Each (In a Pack of 5) (ex VAT)

€ 3.213

Each (In a Pack of 5) (inc. VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20€ 2.70€ 13.50
25 - 45€ 2.44€ 12.20
50 - 120€ 2.32€ 11.60
125 - 245€ 2.19€ 10.95
250+€ 2.04€ 10.20

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more