Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
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P.O.A.
Production pack (Reel)
15
P.O.A.
Production pack (Reel)
15
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si