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Infineon OptiMOS FD N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

RS Stock No.: 145-8744Brand: InfineonManufacturers Part No.: IPP220N25NFDAKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS FD

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

15.95mm

Country of Origin

China

Product details

Infineon OptiMOS™ FD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

€ 201.00

€ 4.02 Each (In a Tube of 50) (ex VAT)

€ 239.19

€ 4.784 Each (In a Tube of 50) (inc. VAT)

Infineon OptiMOS FD N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1

€ 201.00

€ 4.02 Each (In a Tube of 50) (ex VAT)

€ 239.19

€ 4.784 Each (In a Tube of 50) (inc. VAT)

Infineon OptiMOS FD N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS FD

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

15.95mm

Country of Origin

China

Product details

Infineon OptiMOS™ FD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more