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Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

RS Stock No.: 215-2539Brand: InfineonManufacturers Part No.: IPP60R099P7XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.36mm

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Stock information temporarily unavailable.

€ 28.70

€ 5.74 Each (In a Pack of 5) (ex VAT)

€ 34.15

€ 6.831 Each (In a Pack of 5) (inc. VAT)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Select packaging type

€ 28.70

€ 5.74 Each (In a Pack of 5) (ex VAT)

€ 34.15

€ 6.831 Each (In a Pack of 5) (inc. VAT)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 20€ 5.74€ 28.70
25 - 45€ 4.91€ 24.55
50 - 120€ 4.67€ 23.35
125 - 245€ 4.39€ 21.95
250+€ 4.15€ 20.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.36mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more