N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
215 nC @ 10 V
Width
21.1mm
Transistor Material
Si
Series
CoolMOS C7
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
5.21mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Production pack (Tube)
1
P.O.A.
Production pack (Tube)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
215 nC @ 10 V
Width
21.1mm
Transistor Material
Si
Series
CoolMOS C7
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
5.21mm
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products