Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.55V
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 76.00
€ 0.76 Each (Supplied on a Reel) (ex VAT)
€ 90.44
€ 0.904 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 76.00
€ 0.76 Each (Supplied on a Reel) (ex VAT)
€ 90.44
€ 0.904 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 0.76 | € 7.60 |
| 250 - 490 | € 0.73 | € 7.30 |
| 500 - 990 | € 0.73 | € 7.30 |
| 1000+ | € 0.68 | € 6.80 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.55V
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


