Infineon CoolMOS™ C3 N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.16mm
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Germany
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 90.00
€ 3.00 Each (In a Tube of 30) (ex VAT)
€ 107.10
€ 3.57 Each (In a Tube of 30) (inc. VAT)
30
€ 90.00
€ 3.00 Each (In a Tube of 30) (ex VAT)
€ 107.10
€ 3.57 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | € 3.00 | € 90.00 |
| 60 - 120 | € 2.95 | € 88.50 |
| 150 - 270 | € 2.92 | € 87.60 |
| 300+ | € 2.82 | € 84.60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
CoolMOS™ C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.16mm
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Germany
Product details
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products