Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China
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€ 1.11
Each (In a Pack of 20) (ex VAT)
€ 1.321
Each (In a Pack of 20) (inc VAT)
Standard
20
![sticker-729](https://cms.rsdelivers.com/repository-v1/Cyprus Label.jpg)
€ 1.11
Each (In a Pack of 20) (ex VAT)
€ 1.321
Each (In a Pack of 20) (inc VAT)
Standard
20
![sticker-729](https://cms.rsdelivers.com/repository-v1/Cyprus Label.jpg)
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | € 1.11 | € 22.20 |
100 - 180 | € 0.88 | € 17.60 |
200 - 480 | € 0.86 | € 17.20 |
500 - 980 | € 0.81 | € 16.20 |
1000+ | € 0.76 | € 15.20 |
Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China