Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Pin Count
8
Forward Diode Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Minimum Gate Threshold Voltage
1.65V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.55V
Maximum Gate Source Voltage
±20 V
Maximum Power Dissipation
2 W
Height
1.5mm
Width
4mm
Length
5mm
Maximum Continuous Drain Current
12 A
Package Type
SO-8
Brand
InfineonSeries
IRF9910
Maximum Drain Source Resistance
18.3 mΩ
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
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P.O.A.
4000
P.O.A.
4000
Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Pin Count
8
Forward Diode Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Minimum Gate Threshold Voltage
1.65V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
2.55V
Maximum Gate Source Voltage
±20 V
Maximum Power Dissipation
2 W
Height
1.5mm
Width
4mm
Length
5mm
Maximum Continuous Drain Current
12 A
Package Type
SO-8
Brand
InfineonSeries
IRF9910
Maximum Drain Source Resistance
18.3 mΩ
Typical Gate Charge @ Vgs
15 nC @ 4.5 V